Direct measurement of product of the electron mobility and mean free drift time of CdZnTe semiconductors using position sensitive single polarity charge sensing detectors

Journal of Applied Physics

Volumn 84, Issue 10, 1998, Pages 5566-5569

  He, Z ^a   Knoll, G F ^a   Wehe, D K ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; GAMMA RAYS; MATHEMATICAL TECHNIQUES; PARTICLE DETECTORS;

DEPTH SENSING METHOD; ELECTRON MOBILITY; HECHT RELATION; MEAN FREE DRIFT TIME; POSITION SENSITIVE SINGLE POLARITY CHARGE SENSING DETECTORS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0032533077     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368601     Document Type: Article

References (6)

1. P. N. Luke, IEEE Trans. Nucl. Sci. 42, 207 (1995).
2. Semiconductors for Room Temperature Nuclear Detector Applications, edited by T. E. Schlesinger and R. B. James, Semiconductors and Semi-metals, Vol. 34 (Academic, New York, 1995), pp. 493-530.
3. K. Hecht, Z. Phys. 77, 235 (1932).
4. Z. He et al., Nucl. Instrum. Methods Phys. Res. A 380, 228 (1996).
5. Z. He et al., Nucl. Instrum. Methods Phys. Res. A 388, 180 (1997).
6. eV Products, 375 Saxonburg Boulevard, Saxonburg, PA 16056.