Terahertz wireless communication using GaAs transistors as detectors

Electronics Letters

Volumn 50, Issue 4, 2014, Pages 323-325

  Tohme L ^a   Blin, S ^a   Ducournau, G ^d   Nouvel, P ^a   Coquillat, D ^c   Hisatake, S ^b   Nagatsuma, T ^b   Penarier A ^a   Varani, L ^a   Knap, W ^c   Lampin, J F ^d  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b OSAKA UNIVERSITY   (Japan)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894061174     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2013.3702     Document Type: Article

References (8)

1. Song, H., and Nagatsuma, T.: Present and future of terahertz communications, IEEE Trans. Terahertz Sci. Technol., 2011, 1, pp. 256-263
2. Jastrow, C., et al.: 300 GHz transmission system, Electron. Lett., 2008, 44, pp. 213-214
3. Ishigaki, K., et al.: Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes, Electron. Lett., 2012, 48, pp. 582-583
4. Dyakonov, M., and Shur, M.: Plasma wave electronics: novel terahertz devices using two dimensional electron fluid, IEEE Trans. Electron. Devices, 1996, 43, pp. 1640-1645
5. Nadar, S., et al.: Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors, J. Appl. Phys., 2010, 108, p. 054508
6. Sakowicz, M., et al.: Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects, J. Appl. Phys., 2011, 110, p. 054512
7. Blin, S., et al.: Plasma-wave detectors for terahertz wireless communication, Electron. Device Lett., 2012, 33, pp. 1354-1356
8. Tohme, L., et al.: 0.2 THz wireless communication using plasma-wave transistor detector. Proc. 38th Int. Conf. Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Mainz, Germany, September 2013