High-gain multiple-gate photodetector with nanowires in the channel

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 357-359

  Roudsari, Fadavi Anita ^a   Saini, Simarjeet S ^a   Nixon, O ^b   Anantram, M P ^c  

^a UNIVERSITY OF WATERLOO   (Canada)

^b DALSA Corporation   (Canada)

^c University of Washington   (United States)

Author keywords

Lateral bipolar action; photodetector; photoresponsivity; silicon nanowire (NW)

Indexed keywords

ACCUMULATION MODES; BIPOLAR ACTION; HIGH-GAIN; MULTIPLE GATES; PHOTORESPONSIVITY; SILICON NANOWIRE (NW); SILICON NANOWIRES;

OPTOELECTRONIC DEVICES; PHOTODETECTORS;

NANOWIRES;

EID: 79951870595     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2103044     Document Type: Article

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