Low dark current amorphous silicon metal-semiconductor-metal photodetector for digital imaging applications

IEEE Electron Device Letters

Volumn 35, Issue 2, 2014, Pages 235-237

  Ghanbarzadeh, Sina ^a   Abbaszadeh, Shiva ^a   Karim, Karim S ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Amorphous silicon; dark current; indirect conversion X ray imaging; MSM photodetectors

Indexed keywords

AMORPHOUS SILICON (A-SI); EXTERNAL QUANTUM EFFICIENCY; FABRICATION PROCESS; IMAGING APPLICATIONS; INDUSTRY STANDARDS; METAL SEMICONDUCTOR METAL PHOTODETECTOR; MSM PHOTODETECTOR; XRAY IMAGING;

AMORPHOUS SILICON; DISPLAY DEVICES; MEDICAL IMAGING; PHOTONS; SILICON; SURFACE PLASMON RESONANCE;

PHOTODETECTORS;

EID: 84893871686     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2295976     Document Type: Article

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