Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate

IOP Conference Series: Materials Science and Engineering

Volumn 6, Issue , 2009, Pages

  Lecestre, A ^a,b   Dubois, E ^a   Villaret, A ^b   Coronel, P ^c   Skotnicki, T ^b   Delille, D ^d   Maurice, C ^e   Troadec, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b STMICROELECTRONICS   (France)

^c CEA GRENOBLE   (France)

^d Thermo Fisher Scientific   (United States)

^e ECOLE DES MINES DE SAINT ETIENNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS GERMANIUM; AMORPHOUS SUBSTRATE; CATALYTIC GROWTH; CRYSTALLINE SI; CRYSTALLINE SILICON FILMS; DIELECTRIC SUBSTRATES; ELECTRON BACK-SCATTERED DIFFRACTION; EMPTY SPACE; EPITAXIAL SILICON; NANOBLADES; NANORIBBONS; SACRIFICIAL LAYER; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SELF-ASSEMBLED; SEM AND TEM; SILICON FILMS; SILICON-ON-INSULATORS; THREE DIMENSIONAL INTEGRATION; VAPOR-LIQUID-SOLID; VERTICAL DIRECTION;

CRYSTALLINE MATERIALS; DIELECTRIC MATERIALS; ELECTRON DIFFRACTION; GERMANIUM; METALLIC FILMS; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; WIND TUNNELS;

AMORPHOUS SILICON;

EID: 84893480159     PISSN: 17578981     EISSN: 1757899X     Source Type: Conference Proceeding    
DOI: 10.1088/1757-899X/6/1/012022     Document Type: Conference Paper

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