Implantation length and thermal stability of interstitial Ar atoms in boron nitride nanotents

ACS Nano

Volumn 8, Issue 1, 2014, Pages 1014-1021

  Cun, Huanyao ^a   Iannuzzi, Marcella ^a   Hemmi, Adrian ^a   Osterwalder, Jürg ^a   Greber, Thomas ^a  

^a UNIVERSITY OF ZURICH   (Switzerland)

Author keywords

graphene; hexagonal boron nitride; implantation length; nanotent; thermal stability

Indexed keywords

HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); INTERSTITIAL DEFECTS; INTERSTITIAL SITES; NANOTENT; ROOM TEMPERATURE; SINGLE LAYER; VARIABLE TEMPERATURE;

ATOMS; BORON NITRIDE; GRAPHENE; SCANNING TUNNELING MICROSCOPY; THERMODYNAMIC STABILITY;

ARGON;

EID: 84893477976     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn405907a     Document Type: Article

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