The effect of thickness on optical band gap and N-type conductivity of CuInS2 thin films annealed in air atmosphere

Energy Procedia

Volumn 44, Issue , 2014, Pages 52-60

  Rabeh, M Ben ^a   Khedmi, N ^a   Fodha, M A ^a   Kanzari, M ^a,b  

^a UNIVERSITY OF TUNIS EL MANAR   (Tunisia)

^b UNIVERSITY OF TUNIS   (Tunisia)

Author keywords

annealing; characterization; CuInS2; film thickness; thin films

Indexed keywords

EID: 84893376947     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2013.12.009     Document Type: Conference Paper

References (41)

1. Iseler GW, Kildal H, Menyuk N. Ternary compounds: Institute of Physics Conference Series 35. London; 1977.
2. Kazmerski LI. Ternary compounds: Institute of Physics Conference Series 35; 1977.
3. Romeo N. Ternary and multinary compounds; Proceedings of the 4th international conference. Japanese Journal of Applied Physics 1980;19:5-133.
4. Wagner S, Bridenbaugh PM. Multicomponent tetradral compounds for solor cells. Journal of Crystal Growth 1977;39:151-159.
5. Shay JL, Tell B, Kasper HM, Schiavone LM. p-d Hybridation of the valence bands of I-III-VI2 compounds. Physical Review B 1972;5:5003-5005.
6. Bandyopadhyaya S, Chaudhuri S, Pal AK. Synthesis of CuInS2 films by sulphurization of Cu/In stacked elemental layers. Solar Energy Materials and Solar Cells 2000;60: 323-339.
7. Gossla M, Hahn T, Metzner H, Conrad J, Geyer U. Thin CuInS2 films by 3-source molecular-beam deposition. Thin Solid Films 1995;268:39-44.
8. Hollingsworth JA, Banger KK, Jin MH-C, Harris JD, Cowen JE, Bohannan EW, Switzer JA, Buhro WE, Hepp AF. Single source precursors for fabrication of I-III-VI2 thin film solar cells via spray CVD. Thin Solid Films 2003;431-432:63-67.
9. Ortega-Lopez M, Morales-Acevedo A. Characterization of CuInS2 thin films for solar cells prepared by spray pyrolysis. Thin Solid Films 1998;330: 96-101.
10. Tiwari AN, Pandya DK, Chopra KL. Electrical and optical properties of single-phase CuInS2 films prepared using spray pyrolysis. Thin Solid Films 1985;130:217-230.
11. Krunks M, MiKli V, Bijakina O, Rebane H, Mere A, Varema T, Mellikov E. Composition and structure of CuInS2 films prepared by spray pyrolysis. Thin Solid Films 2000; 361-362:61-64.
12. Mahmoud S, Eid AH. Some studies on chemically and thermally prepared CuInS2 films. Fizika A 1997;6:171-180.
13. Möller J, Fischer CH-H, Muffler HJ, Könenkamp R, Kaiser I, Kelch C, Lux-Steiner MC. A novel deposition technique for compound semiconductors on highly porous substrates: ILGAR. Thin Solid Films 2000; 361-362:113-117.
14. Muffler H-J, Fischer Ch-H, Diesner K, Lux-Steiner MC. ILGAR-A novel thin-film technology for sulphides. Solar Energy Materials and Solar Cells 2001;67:121-127.
15. Yukawa T, Kuwabara K, Koumoto K. Electrodeposition of CuInS2 from aqueous solution (II) electrodeposition of CuInS2 film. Thin Solid Films 1996;286:151-153.
16. Allouche N Kamoun, Jebbari N, Guasch C, Turki NKamoun. Ifluence of aluminium doping in CuInS2 prepared by spray pyrolysis on different substrates. Journal of Alloys and Compounds 2010;501:85-88.
17. John TT, Sebastian T, Kartha CS, Vijayakumar KP, Abe T, Kashiwaba Y. Effects of incorporation of Na in spray pyrolysed CuInS2 thin films. Physica B: Condensed Matter 2007;388: 1-9.
18. Ben Rabeh M, Kanzari M, Rezig B. Role of oxygen in enhancing N-type conductivity of CuInS2 thin films. Thin Solid Films 2007;515:5943-5948.
19. Ben Rabeh M, Zribi M, Kanzari M, Rezig B. Structural and optical characterization of Sn incorporation in CuInS2 thin films grown by vacuum evaporation method. Materials Letters 2005;59:3164-3168.
20. Ben Rabeh M, Chaglabou N, Kanzari M. Effect of antimony incorporation on structural properties of CuInS2 crystals. Nuclear Instruments and Methods in Physics Research B 2010;268:273-276.
21. Zribi M, Ben Rabeh M, Brini R, Kanzari M, Rezig B. Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method. Thin Solid Films 2006;511-512:125-129.
22. Ben Rabeh M, Kanzari M, Rezig B. Effect of Zinc Incorporation in CuInS2 thin films grown by vacuum evaporation method. Acta Physica Polonica A 2009;115: 699-703.
23. Zribi M, Kanzari M, Rezig B. Post-growth annealing treatment effects on properties of Na-doped CuInS2 thin films. Materials Science and Engineering B 2008;149:1-6.
24. Zribi m, Kanzari m, Rezig B. Optical constants of Na-doped CuInS2 thin films. Materials Letters 2006;60: 98-103.
25. Streicher F, Sadewasser S, Enzenhofer T, Schock HW, Lux-Steiner M Ch. Locally resolved surface photo voltage spectroscopy on Zn- doped CuInS2 polycrystalline thin films. Thin Solid Films 2009;517: 2349-2352.
26. Yamamoto T, V Luck IIka, Scheer R. Materials design of n-type CuInS2 thin films using Zn or Cd species. Applied Surface Science 2000;159-160:350-354.
27. Watanabe T, Nakazawa H, Matsui M, Ohbo H, Nakada T. The influence of sodium on the properties of CuInS2 thin films and solar cells. Solar Energy Materials and Solar Cells 1997;49:357-363.
28. Watanabe T, Yamamoto T. Control of defects in CuInS2 thin films by incorporation of Na and O. Japanese Journal of Applied Physics 2000;39:1280-1282.
29. Watanabe T, Nakazawa H, Matsui M. Improvement of the electrical properties of Cu-poor CuInS2 thin films by sodium incorporation. Japanese Journal of Applied Physics 1998;37:1370-1372.
30. Zribi M, Kanzari M, Rezig B. Effects of Na incorporation in CuInS2 thin films. The European Physical Journal Applied Physics 2005;29:203-207.
31. Heavens O.S. Optical Properties of Thin Solid Films; Butterworths: London; 1950.
32. B. Van Zeghbroeck. Principales of electronic devices:Principle of Semiconductor Devices;1997.
33. Golan G, Axelevitch A, Gorenstein B, Manevych V. Hot-probe method for evaluation of impurities cpncentration in semiconductors. Microelectronics Journal 2006;37:910-915.
34. Klug HP, Alexander LE. X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials. Wiley-Interscience. New York; 1974.p.594-597.
35. Hulliger F, Mooser E. The bond description of semiconductors: polycompounds. Progress in Solid State Chemistry 1965;2:330-377.
36. Tauc J. Amorphous and Liquid Semiconductors. Plenum Press. London; 1974.
37. David EA, Mott NF. Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors. Philosophical Magazine 1970;22:903-922.
38. Milovzorov DE, Ali AM, Inokuma T, Kurata Y, Suzuki T, Hasegawa S. Optical properties of silicon nanocrystallites in polycrystalline silicon films prepared at low temperature by plasma -enhanced chemical vapour deposition. Thin Solid Films 2001;382: 47-55.
39. Sönmezoǧlu S, Arslan A, Serin T, Serin N. The effects of film thickness on the optical properties of TiO2-SnO2 compound thin films. Physica Scripta 2011;84:065602-065607.
40. Varnamkhasti MG, Fallah HR, Mostajaboddavati M, Hassanzadeh A. Influence of Ag thickness on electrical, optical and structural properties of nanocrystalline MoO3/Ag/ITO multilayer for optoelectronic applications. Vacuum 2012;86:1318-1322.
41. Ovshinsky SR, Adler D. Local structure, bonding, and electronic properties of covalent amorphous semiconductors. Contemporary Physics 1978;19:109-126.