Evaluation of effective carrier lifetime in epitaxial silicon layers

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 771-776

  Vainola H ^a   Storgards J ^a   Yli Koski, M ^a   Sinkkonen, J ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

Built in potential; Carrier lifetime; Continuity equation; Epitaxial layers; Photoconductive decay

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRIC PROPERTIES; INTEGRATED CIRCUIT MANUFACTURE; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SUBSTRATES;

CARRIER LIFETIME; EPITAXIAL SILICON LAYER; RECOMBINATION LIFETIME;

SILICON WAFERS;

EID: 16744364966     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (3)