Structural and electronic properties of wurtzite GaX (X = N, P, As, Sb, Bi) under in-plain biaxial strains

Superlattices and Microstructures

Volumn 67, Issue , 2014, Pages 25-32

  Cao, Huawei ^a   Lu, Pengfei ^a,e   Zhang, Xianlong ^a   Yu, Zhongyuan ^a   Han, Lihong ^a   Chen, Jun ^b   Wang, Shumin ^c,d  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b Institute of Applied Physical and Computational Mathematics   (China)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^d CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^e NONE   (China)

Author keywords

Biaxial strain; Electronic structure modulations; First principles; Pseudographitic

Indexed keywords

BIAXIAL STRAINS; ELASTIC STIFFNESS COEFFICIENTS; FIRST-PRINCIPLES; FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; PSEUDOGRAPHITIC; STRUCTURAL AND ELECTRONIC PROPERTIES; STRUCTURE MODULATION; TENSILE BIAXIAL STRAIN;

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXIAL GROWTH; ZINC SULFIDE;

STRAIN;

EID: 84892699698     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2013.12.016     Document Type: Article

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