Structural and electronic properties of zinc blend GaAs1-xBix solid solutions

Physica B: Condensed Matter

Volumn 405, Issue 9, 2010, Pages 2311-2316

  Abdiche, A ^a   Abid, H ^a   Riane, R ^a   Bouaza, A ^b  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITY OF TIARET   (Algeria)

Author keywords

DFT; FP LAPW; GaAs; GaAsBi; GaBi; Semi metals; Semiconductors

Indexed keywords

BAND GAP ENERGY; BULK MODULUS; FIRST PRINCIPLES TOTAL ENERGY CALCULATIONS; FP-LAPW; GAAS; LATTICE PARAMETERS; PRESSURE DERIVATIVES; SEMI-METALS;

CRYSTALLIZATION; ELECTRONIC PROPERTIES; GALLIUM ALLOYS; GALLIUM ARSENIDE; LITHIUM BATTERIES; PROBABILITY DENSITY FUNCTION; SOLID SOLUTIONS; SOLIDIFICATION; ZINC;

SEMICONDUCTING GALLIUM;

EID: 77949916259     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.02.034     Document Type: Article

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