SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 13, 2014, Pages 6363-6368

Heavy element doping for enhancing thermoelectric properties of nanostructured zinc oxide

(7) Jood, Priyanka a,b Mehta, Rutvik J a Zhang, Yanliang a,d Borca Tasciuc, Theo a Dou, Shi Xue b Singh, David J c Ramanath, Ganpati a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b UNIVERSITY OF WOLLONGONG (Australia)

c OAK RIDGE NATIONAL LABORATORY (United States)

d Boise State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH MELTING POINT; HIGH POWER FACTOR; HIGH THERMAL CONDUCTIVITY; IMPURITY SCATTERING; NANOSTRUCTURED ZINC OXIDES; THERMO-ELECTRIC MATERIALS; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES;

CHARGE CARRIERS; CHEMICAL ELEMENTS; ELECTRIC POWER FACTOR; GRAIN GROWTH; INDIUM ALLOYS; SEMICONDUCTOR DOPING; THERMOELECTRIC EQUIPMENT;

ZINC OXIDE;

EID: 84892614350 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c3ra46813e Document Type: Article

Times cited : (64)

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