The effects of doping a grain boundary in ZnO with various concentrations of Bi

Surface Science

Volumn 532-535, Issue , 2003, Pages 351-358

  Carlsson, Johan M ^a,c   Hellsing, Bo ^a   Domingos, Helder S ^b   Bristowe, Paul D ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

Density functional calculations; Grain boundaries; Interface states; Zinc oxide

Indexed keywords

BISMUTH; DOPING (ADDITIVES); INTERFACES (MATERIALS); PROBABILITY DENSITY FUNCTION; VARISTORS; ZINC OXIDE;

SEGREGATION ENERGY;

GRAIN BOUNDARIES;

EID: 0037846310     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00193-6     Document Type: Conference Paper

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