Investigation on the electrical transport properties of highly (00l)-textured Sb2Te3 films deposited by molecular beam epitaxy

Journal of Applied Physics

Volumn 115, Issue 2, 2014, Pages

  Zhang, Xiangpeng ^a   Zeng, Zhigang ^a   Shen, Chao ^a   Zhang, Ziqiang ^a   Wang, Zhichong ^a   Lin, Cong ^a   Hu, Zhiyu ^a,b  

^a SHANGHAI UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY TELLURIDE; CRYSTALLINE QUALITY; ELECTRICAL CONDUCTIVITY; ELECTRICAL TRANSPORT PROPERTIES; HALL COEFFICIENT MEASUREMENTS; INCREASING TEMPERATURES; LOW CONCENTRATIONS; TEMPERATURE COEFFICIENT;

CARRIER CONCENTRATION; DEFECTS; EPITAXIAL GROWTH; GRAIN BOUNDARIES; HALL MOBILITY; IMPURITIES; MOLECULAR BEAM EPITAXY; THICK FILMS; X RAY DIFFRACTION ANALYSIS;

ELECTRIC PROPERTIES;

EID: 84892391771     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4861394     Document Type: Article

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