Study of Gd-doped Bi2Te3 thin films: Molecular beam epitaxy growth and magnetic properties

Journal of Applied Physics

Volumn 115, Issue 2, 2014, Pages

  Harrison, S E ^a   Collins Mcintyre, L J ^b   Li, S ^c   Baker, A A ^b,d   Shelford, L R ^d   Huo, Y ^a   Pushp, A ^e   Parkin, S S P ^e   Harris, J S ^a   Arenholz, E ^f   Van Der Laan, G ^d   Hesjedal, T ^b  

^a Stanford University   (United States)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c STANFORD UNIVERSITY   (United States)

^d Magnetic Spectroscopy Group   (United Kingdom)

^e IBM ALMADEN RESEARCH CENTER   (United States)

^f LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POLARIZATION EFFECT; SATURATION FIELDS; SOLUBILITY LIMITS; SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE MAGNETOMETRY; SURFACE OXIDATIONS; TIME REVERSAL SYMMETRIES; TOPOLOGICAL INSULATORS; X-RAY MAGNETIC CIRCULAR DICHROISM;

ELECTRIC INSULATORS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MAGNETIC MOMENTS; MAGNETOMETERS; MOLECULAR BEAM EPITAXY; QUANTUM HALL EFFECT; SEMICONDUCTOR DOPING; SPECTROSCOPY; SQUIDS; THIN FILMS;

BISMUTH;

EID: 84892387631     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4861615     Document Type: Article

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