On density-gradient modeling of tunneling through insulators

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 275-278

  Hohr T ^a   Schenk, A ^a   Wettstein, A ^b   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

Charge carrier processes; Electronic mail; Insulation; Laboratories; Modeling; MOSFETs; Partial differential equations; Poisson equations; Schrodinger equation; Tunneling

Indexed keywords

ELECTRON TUNNELING; ELECTRONIC MAIL; INSULATION; LABORATORIES; MODELS; PARTIAL DIFFERENTIAL EQUATIONS; POISSON EQUATION; RESONANT TUNNELING; SCHRODINGER EQUATION; SEMICONDUCTOR DEVICES;

BARDEEN METHODS; CHARGE CARRIER PROCESS; DENSITY DIFFERENCE; DENSITY GRADIENT MODEL; DOUBLE BARRIERS; MOSFETS; THIN INSULATING BARRIERS; TUNNELING CURRENT;

MOSFET DEVICES;

EID: 84892316328     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034571     Document Type: Conference Paper

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