Compact model of a three-terminal MRAM device based on Spin Orbit Torque switching

2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013

Volumn , Issue , 2013, Pages

  Jabeur, K ^a   Prenat, G ^a   Di Pendina, G ^a   Buda Prejbeanu, L D ^a   Prejbeanu, I L ^a   Dieny, B ^a  

^a UMR 8191   (France)

Author keywords

ASIC electrical simulation; Magnetic Tunnel Junction; MRAM; Spin orbit Torque; Spintronic

Indexed keywords

ELECTRICAL SIMULATION; MAGNETIC TUNNEL JUNCTION; MRAM; SPIN ORBITS; SPINTRONIC;

CHIP SCALE PACKAGES; COMPUTER AIDED DESIGN; COMPUTER HARDWARE DESCRIPTION LANGUAGES; MAGNETIC DEVICES; MRAM DEVICES;

COMPUTER SIMULATION;

EID: 84892155324     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCDG.2013.6656320     Document Type: Conference Paper

References (23)

1. S. Wolf, D. Awschalom, R. Buhrman, J. Daughton, S. Von Molnar, M. Roukes, A. Chtchelkanova, and M. Treger, Science 294, 1488 (2001)
2. Freescale MRAM products update reports (2007)
3. http://www. mram-info. com/tags/stt-ram
4. Everspin (2012). [Online]. Available: http://www. everspin. com
5. B. N. Engel, J. Akerman, B. Butcher, R. W. Dave, M. DeHerrera, M. Durlam, G. Grynkewich, J. Janesky, S. V. Pietambaram, N. D. Rizzo, J. M. Slaughter, K. Smith, J. J. Sun, and S. Tehrani, "A 4-Mb toggle MRAM based on a novel bit and switching method," IEEE Trans. Magn., vol. 41, no. 1, pp. 132-136, Jan. 2005
6. I. L. Prejbeanu, M. Kerekes, R. C. Sousa, H. Sibuet, O. Redon, B. Dieny, and J. P. Nozieres, "Thermally assisted MRAM," J. Phys,-Condens. Matter, p. 165218, 2007
7. Erya Deng et al, "Low Power Magnetic Full-Adder based on Spin Transfer Torque MRAM", IEEE Transactions on Magnetics, Vol PP, Issue 99, p. 1, Feb. 2013
8. Hui Zhao et al, "A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STTMRAMs for High-Density Cache Memory", IEEE journal of Solid-State Circuits, Vol. 48, No. 2, February 2013
9. Pietro Gambardella and Ioan Mihai Miron, "Current-induced spin?orbit torques", doi: 10. 1098/rsta. 2010. 0336, Phil. Trans. R. Soc. A 2011 369, 3175-3197
10. Ioan Mihai Miron et al, "Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection", Nature 476, 189-193 doi: 10. 1038/nature10309. 11, August 2011
11. Luqiao Liu, "Magnetic switching by spin torque from the spin Hall effect", Materials Science (cond-mat. mtrl-sci), arXiv:1110. 6846, Nov 2011
12. Luqiao Liu et al. "Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum", DOI: 10. 1126/science. 1218197 Science 336, 555 (2012)
13. Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young,"Voltage and Energy-Delay Performance of Giant Spin Hall Effect Switching for Magnetic Memory and Logic", arXiv:1301. 5374v1 [cond-mat. mes-hall]) (Submitted on 23 Jan 2013)
14. Virgile Javerliac, "Développement d'un modèle compact de la jonction tunnel magnétique de première géné ration et son intégration dans la réalisation d'architectures logiques reprogrammables hybrides magnétique-CMOS, PhD, SPINTEC, INP, Nov 2006
15. L. Landau and E. Lifshitz,"Theory of the dispertion of magnetic permeability in ferromagnetic bodies". Phys. Z. Sowjetunion, 8:153-169, 1935
16. M. Julliere, "Tunneling between ferromagnetic films". Phys. Lett. A, 54:225-226, 1975
17. J. G. Simmons. Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film. J. Appl. Phys., 34:1793-1803, June 1963
18. W. F. Brinkman, R. C. Dynes, and J. M. Rowell, "Tunneling conductance of asymmetrical barriers". J. Appl. Phys., 41:1915-1921, April 1970
19. C. H. Back, R. Allenspash, W. Weber, S. S. P. Parkin, D. Weller, E. L. Garwin, and H. C. Siegmann, "Minimum field strength in precessional magnetization reversal", Science, 285(5429):864-867, August 1999
20. L. Q. Liu, T. Moriyama, D. C. Ralph, and R. A. Buhrman, "Reduction of the spin-torque critical current by partially canceling the free layer demagnetization field. " Appl. Phys. Lett. 94, 122508 (2009)
21. T. Moriyama, T. J. Gudmundsen, P. Y. Huang, L. Q. Liu, D. A. Muller, D. C. Ralph, and R. A. Buhrman, " Tunnel magnetoresistance and spin torque switching in MgO-based magnetic tunnel junctions with a Co/Ni multilayer electrode", Appl. Phys. Lett. 97, 072513 (2010)
22. S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura & H. Ohno, "A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction", Nature Materials 9, 721-724 (2010) doi:10. 1038/nmat2804
23. T. Kishi et al.," Lower-current and fast switching of a perpendicular TMR for high speed and high density spintransfer-torque MRAM", IEDM. 2008. 4796680.