Tunnel magnetoresistance and spin torque switching in MgO-based magnetic tunnel junctions with a Co/Ni multilayer electrode

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Moriyama, Takahiro ^a   Gudmundsen, Theodore J ^a   Huang, Pinshane Y ^a   Liu, Luqiao ^a   Muller, David A ^a   Ralph, Daniel C ^a   Buhrman, Robert A ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPARALLEL-TO-PARALLEL SWITCHING; DEMAGNETIZATION FIELDS; DEMAGNETIZING FIELD; INSERTION LAYERS; INTERFACE ANISOTROPY; MAGNETIC TUNNEL JUNCTION; MULTILAYER ELECTRODES; NONUNIFORM; SPIN-TORQUE SWITCHING; SWITCHING CURRENTS; TUNNEL MAGNETORESISTANCE;

DEMAGNETIZATION; ELECTRIC RESISTANCE; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETIC PROPERTIES; MAGNETOELECTRONICS; MAGNETORESISTANCE; MULTILAYERS; TEMPERATURE MEASUREMENT; TUNNEL JUNCTIONS;

SWITCHING;

EID: 77956027635     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3481798     Document Type: Article

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