Combination of temperature cycled and gate bias cycled operation to enhance the selectivity of SiC-FET gas sensors

2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013

Volumn , Issue , 2013, Pages 2041-2044

  Bur, C ^a,b   Bastuck, M ^a   Schutze, A ^a   Spetz, A Lloyd ^b   Andersson, M ^b  

^a SAARLAND UNIVERSITY   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

feature extraction; gate bias modulation; selectivity; SiC FET; temperature modulation

Indexed keywords

GAS CONCENTRATION; GAS SENSITIVE FIELD EFFECT TRANSISTORS; GATE BIAS; LINEAR DISCRIMINANT ANALYSIS; MULTIVARIATE STATISTICS; SIC-FET; TEMPERATURE CYCLING; TEMPERATURE MODULATION;

ACTUATORS; CARBON MONOXIDE; CATALYST SELECTIVITY; CHEMICAL SENSORS; FEATURE EXTRACTION; FIELD EFFECT TRANSISTORS; MICROSYSTEMS; NITROGEN OXIDES; SILICON CARBIDE; SOLID-STATE SENSORS;

MODULATION;

EID: 84891720449     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/Transducers.2013.6627199     Document Type: Conference Paper

References (18)

1. I. Lundström, H. Sundgren, F. Winquist, M. Eriksson, C. Krantz-Rülcker and A. Lloyd Spetz, "Twenty-five years of field effect gas sensor research in Linköping," Sens. Actuators B, vol. 121, pp. 247 - 262, 2007.
2. A. Lloyd Spetz and S. Svage in W.J. Choyke, H. Matsunami, G. Pensl (eds.) Silicon Carbide - Recent Major Advances, Springer, 2003.
3. M. Eriksson, L.-G. Ekedahl, "Hydrogen adsorption states at the Pd/SiO2 interface and simulation of the response of a Pd metal-oxide- semiconductor hydrogen sensor," Journal of Applied Physics vol. 83 no. 8, pp. 3947-3951, 1998.
4. Z. Darmastuti, R. Pearce, A. Lloyd Spetz, M. Andersson, "The influence of gate bias and structure on the CO sensing performance of SiC based field effect sensors," Proc. IEEE Sensors 2011, Limerick, Ireland, October 28-31, 2011, pp. 133-136.
5. S. Nakagomi, P. Tobias, A. Baranzahi, I. Lundström, "Influence of carbon monoxide, water and oxygen on high temperature catalytic metal-oxide-silicon carbide structures," Sens. Actuators B, vol. 45, no. 3, pp. 183 - 191, 1997.
6. J. Schalwig, P. Kreisl, S. Ahlers and G. Müller, "Response mechanism of SiC-Based MOS fieldeffect gas sensors," IEEE Sens. Journal, vol. 2, no. 5, pp. 394 - 402, 2002.
7. C. Bur, P. Reimann, M. Andersson, A. Schütze and A. Lloyd Spetz, "Increasing the selectivity of Pt-Gate SiC field effect gas sensors by dynamic temperature modulation," IEEE Sens. Journal, vol. 12, no. 6, pp. 1906 - 1913, 2012.
8. A.P. Lee and B.J. Reedy, "Temperature modulation in semiconductor gas sensing," Sens. Actuators B, vol. 60, no. 1, pp. 35 - 42, 1999.
9. S. Nakagomi, A. Fukumura, Y. Kokubun, S. Savage, H. Wingbrant, M. Andersson, I. Lundström, M. Löfdahl and A. Lloyd Spetz, "Influence of gate bias of MISiC-FET gas sensor device on the sensing properties, Sens. Actuators B, vol. 108, pp. 501-507, 2005.
10. C. Bur, M. Andersson, A. Lloyd Spetz and A. Schütze, "Influence of a changing gate bias on the sensing properties of SiC field effect gas sensors," Proc. IMCS 2012, Nuremberg, Germany, pp.140 - 143, 2012.
11. M. Bastuck, C. Bur, A. Lloyd Spetz, M. Andersson and A. Schütze, "Identification of ammonia and carbon monoxide based on the hysteresis of a gassensitive SiC field effect transistor," Proc. Transducers 2013, Barcelona, Spain, June 16-20, 2013.
12. C. Petit, D. Zander, K. Lmimouni, M. Ternisien, D. Tondelier, S. Lenfant and D. Vuillaume, "Gate pulse electrical method to characterize hysteresis phenomena in organic field effect transistor," Organic Elec., vol. 9, no. 6, pp. 979 - 984, 2008.
13. Y. Paska and H. Haick, "Interactive effect of hysteresis and surface chemistry on gated silicon nanowire gas sensors," ACS Appl. Mater. Interfaces, vol. 4, iss. 5, pp. 2604 - 2617, 2012.
14. A. Schütze, A. Gramm and T. Rühl, "Identification of organic solvents by a virtual multisensor system with hierarchical classification," IEEE Sens. Journal, vol. 4, no. 6, pp. 857 - 86, 2004.
15. R. Pohle, O. von Sicard, M. Fleischer, H.-P. Frerichs, C. Wilbertz and I. Freund, "Gate pulsed readout of floating gate FET gas sensors," Procedia Engineering, vol. 5, pp. 13 - 16, 2010.
16. R. Pohle, "Transient operation techniques for gas sensor applications," Procedia Engineering, vol. 47, pp. 1466 - 1473, 2012.
17. M. Andersson, R. Pearce and A. Lloyd Spetz, "New generation SiC based field effect transistor gas sensors," Sens. Actuators B, vol. 179, pp. 95 - 106, 2013.
18. SPSS Inc., SPSS Base 16.0 User's Guide, chap. 30, pp. 346 - 353, 2007.