The influence of gate bias and structure on the CO sensing performance of SiC based field effect sensors

Proceedings of IEEE Sensors

Volumn , Issue , 2011, Pages 133-136

  Darmastuti, Zhafira ^a   Pearce, Ruth ^a   Lloyd Spetz, Anita ^a   Andersson, Mike ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON PRESSURE; CO CONCENTRATIONS; CO SENSING; DC MAGNETRON SPUTTERING; DIFFERENT STRUCTURE; FIELD EFFECT SENSORS; GATE BIAS; GATE MATERIALS; GATE STRUCTURE; INSULATOR SURFACES; REACTION CHARACTERISTICS;

ADSORPTION; CHEMISORPTION; FIELD EFFECT TRANSISTORS; PLATINUM; SILICON CARBIDE;

SENSORS;

EID: 84856920283     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2011.6127261     Document Type: Conference Paper

References (8)

1. A. Lloyd Spetz, S. Nakagomi, S. Savage, in Advances in Silicon Carbide Processing and Applications, S. E. Saddow, A. Agarwal, Eds. Artech House (2004), pp. 29-67
2. M. Eriksson, L.-G. Ekedahl, J. Appl. Phys. 83 (1998), pp. 3947-3951
3. J. Schalwig S.Ahlers, P. Kreisl, C. Bosch-v. Braunmühl, G. Müller, Sens. Actuat. B101 (2004), pp. 63-71
4. L. Unéus, T. Artursson, M. Mattsson, P. Ljung, R. Wigren, P. Mårtensson, M. Holmberg, I. Lundström, A. Lloyd Spetz, IEEE Sensors Journal 5(1) (2005), pp. 75-81
5. S. Nakagomi, P. Tobias, A. Baranzahi, I. Lundström, P. Mårtensson, A. Lloyd Spetz, Sens. Actuat. B 45 (1997), pp. 183-191
6. J. Schalwig, P. Kreisl, S. Ahlers, G. Müller, IEEE Sensors Journal 2:5 (2002), pp. 394-402
7. E. Becker, M. Andersson, M. Eriksson, A. Lloyd Spetz, M. Skoglundh, IEEE Sensors Journal 11(7) (2011), pp. 1527-1534
8. M. Andersson, R. Pearce, K. Buchholt, H. Wingbrant, M. Eriksson, A. Lloyd Spetz, IEEE Sensors Journal, submitted