Gate pulse electrical method to characterize hysteresis phenomena in organic field effect transistor

Organic Electronics

Volumn 9, Issue 6, 2008, Pages 979-984

  Petit, C ^a   Zander, D ^a   Lmimouni, K ^b   Ternisien, M ^b   Tondelier, D ^b   Lenfant, S ^b   Vuillaume, D ^b  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b UNIV LILLE   (France)

Author keywords

Hysteresis; Organic field effect transistors; Trapping detrapping effect

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DECAY (ORGANIC); DRAIN CURRENT; ELECTRIC FIELD EFFECTS; GATE DIELECTRICS; HYSTERESIS; REFRACTORY METAL COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICA; SILICON OXIDES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

DEVICE PERFORMANCE; ELECTRICAL METHODS; EXPERIMENTAL TECHNIQUES; HYSTERESIS BEHAVIOR; HYSTERESIS EFFECT; HYSTERESIS PHENOMENON; ORGANIC THIN FILM TRANSISTOR (OTFTS); TRAPPING-DETRAPPING EFFECT;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 54049155020     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2008.07.013     Document Type: Article

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