SCOPUS 정보 검색 플랫폼

2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Volumn , Issue , 2011, Pages

Scaling effect of device area and film thickness on electrical and reliability characteristics of RRAM

(4) Lee, Joonmyoung a Park, Jubong a Jung, Seungjae a Hwang, Hyunsang a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; ATOMIC SCALE; CROSS-POINT ARRAY; DEVICE PERFORMANCE; ELECTRICAL AND RELIABILITY CHARACTERISTICS; HIGH DENSITY; HIGH-SPEED OPERATION; LONG-TERM RETENTION; LOW POWER; NAND FLASH; NONVOLATILE MEMORY DEVICES; SCALING EFFECTS; SWITCHING MECHANISM;

METALLIZING; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SWITCHING;

EQUIPMENT;

EID: 80052072437 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IITC.2011.5940297 Document Type: Conference Paper

Times cited : (27)

References (6)

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3
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4
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- New set/reset scheme for excellent uniformity in bipolar resistive memory
- J. Park, M. Jo, S. Jung, J. Lee, W. Lee, S. Kim, S. Park, J. Shin, and H. Hwang, "New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory", IEEE electron device Lett., vol. 32, pp.228-230, 2011.
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