The Comparison of (Ag,Cu)(In,Ga)Se2 and Cu(In,Ga)Se2 thin films deposited by three-stage coevaporation

IEEE Journal of Photovoltaics

Volumn 4, Issue 1, 2014, Pages 447-451

  Chen, Lei ^a,b   Lee, Jinwoo ^b   Shafarman, William N ^a,b  

^a UNIVERSITY OF DELAWARE   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

(Ag Cu)(In Ga)Se2; Ga gradient; grain size; texture; three stage deposition

Indexed keywords

(AG CU)(IN GA)SE2; CO-EVAPORATIONS; DEPOSITION CONDITIONS; FILM TEXTURES; GRAIN SIZE; HIGH GROWTH TEMPERATURES; SUBSTRATE TEMPERATURE; THREE-STAGE DEPOSITION;

COPPER; DEPOSITION; FILM GROWTH; GALLIUM; GRAIN SIZE AND SHAPE; GROWTH TEMPERATURE; SEMICONDUCTING SELENIUM COMPOUNDS; TEXTURES;

SILVER;

EID: 84891557835     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2280471     Document Type: Article

References (14)

1. J. L. Shay and J. H. Wernick, Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications. New York, NY, USA: Pergamon, 1975.
2. P. T. Erslev, J. Lee, G. M. Hanket, W. N. Shafarman, and J. D. Cohen, "The electronic structure of Cu(In1?x Gax )Se2 alloyed with silver," Thin Solid Films, vol. 519, pp. 7296-7299, Aug. 2011.
3. M. Contreras, J. Tuttle, A. Gabor, A. Tennant, K. Ramanathan, S. Asher, A. Franz, J. Keane, L. Wang, J. Scofield, and R. Noufi, "High efficiency Cu(In,Ga)Se2-based solar cells: Processing of novel absorber structures," in Proc. IEEE 1st World Conf. Photovolt. Energy Convers.,Waikoloa, HI, USA, 1994, pp. 68-75.
4. G. Hanket, J. H. Boyle, and W. N. Shafarman, "Characterization and device performance of (AgCu)(InGa)Se2 absorber layers," in Proc. 34th IEEE Photovolt. Spec. Conf., Philadelphia, PA, USA, 2009, pp. 1240-1245.
5. G. M. Hanket, J. H. Boyle, W. N. Shafarman, and G. Teeter, "Widebandgap (AgCu)(InGa)Se2 absorber layers deposited by three-stage coevaporation," in Proc. 35th IEEE Photovolt. Spec. Conf., Honolulu, HI, USA, 2010, pp. 3425-3429.
6. J. Kessler, J. Scholdstrom, and L. Stolt, "Rapid Cu(In,Ga)Se2 growth using "end point detection"," in Proc. 28th IEEE Photovolt. Spec. Conf., Anchorage, AK, USA, 2000, pp. 509-512.
7. J. Boyle, G. Hanket, and W. Shafarman, "Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers," in Proc. 34th IEEE Photovolt. Spec. Conf., Philadelphia, PA, USA, 2009, pp. 1349-1354.
8. J. Boyle, B. McCandless, G. Hanket, andW. Shafarman, "Structural characterization of the (AgCu)(InGa)Se2 thin film alloy system for solar cells," Thin Solid Films, vol. 519, pp. 7292-7295, Aug. 2011.
9. ICDD DDView 4.8.3.4 using PDF-2/Release 2008 RDB 2.0804, The International Centre for Diffraction Data, Newtown Square, PA, USA, 2008.
10. A. Gabor, J. Tuttle, M. Bode,A. Franz,A. Tennant,M.Contreras, R. Noufi, D. Jensen, and A. Hermann, "Band-gap engineering in Cu(In,Ga)Se2 thin films grown from (In,Ga)2 Se3 precursors," Sol. Energ. Mat. Sol. Cells, vol. 41-42, pp. 247-260, Jun. 1996. (Pubitemid 126357074)
11. K. J. Kurzydlowski and B. Ralph, The Quantitative Description of the Microstructure of Materials. Boca Raton, FL, USA: CRC Press, 1995.
12. G. Harris, "Quantitative measurement of preferred orientation in rolled uranium bars," Philos. Mag., vol. 43, pp. 113-123, Apr. 1952.
13. B. E. McCandless, L. V. Moulton, and R. W. Birkmire, " Recrystallization and sulfur diffusion in CdCl2-treated CdTe/CdS thin films," Prog. Photovolt.: Res. Appl., vol. 5, pp. 249-260, Jul. 1997. (Pubitemid 127649083)
14. D. K. Suri, K. C. Nagpal, and G. K. Chadha, "X-ray study of CuGax In1x Se2 solid solutions," J. Appl. Crystallogr., vol. 22, pp. 578-583, Dec. 1989.