SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7296-7299

The electronic structure of Cu(In1 - XGax)Se 2 alloyed with silver

(5) Erslev, Peter T a Lee, Jinwoo a Hanket, Gregory M b Shafarman, William N b Cohen, J David a

a UNIVERSITY OF OREGON (United States)

b UNIVERSITY OF DELAWARE (United States)

Author keywords

CIGS; Defects; Photovoltaic

Indexed keywords

BAND GAPS; CAPACITANCE PROFILING; CDS; CIGS; DEGREE OF DISORDER; FREE CARRIER DENSITY; I-V MEASUREMENTS; INTERFACE TRAPS; JUNCTION CAPACITANCES; PHOTOVOLTAIC; TEMPERATURE DEPENDENT; TRANSIENT PHOTOCAPACITANCE SPECTROSCOPIES; URBACH ENERGY;

ALLOYS; CAPACITANCE; DEFECTS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM; SILVER;

SILVER ALLOYS;

EID: 80052176123 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.01.368 Document Type: Conference Paper

Times cited : (81)

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