Wide-bandgap (AgCu)(InGa)Se2 absorber layers deposited by three-stage co-evaporation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 3425-3429

  Hanket, Gregory M ^a   Boyle, Jonathan H ^a   Shafarman, William N ^a   Teeter, Glenn ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; CO-EVAPORATIONS; DEVICE PERFORMANCE; INCIDENT FLUX; MOLAR FLUX; PROCESS VARIABILITY; SUBSTRATE TEMPERATURE; WIDE BAND GAP;

ENERGY GAP; EVAPORATION; GALLIUM; GALLIUM ALLOYS; PHOTOVOLTAIC EFFECTS; SILVER;

COPPER;

EID: 78650152330     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614576     Document Type: Conference Paper

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