Annealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: A photoluminescence and TEM study

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-6

  Pita, Kantisara ^a,b   Baudin, Pierre ^a,b   Vu, Quang Vinh ^a   Aad, Roy ^c   Couteau, Christophe ^a,b,c   Lérondel, Gilles ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b RESEARCH TECHNO PLAZA   (Singapore)

^c UNIVERSITÉ DE TECHNOLOGIE DE TROYES   (France)

Author keywords

Photoluminescence; UV emission; ZnO nanocrystals

Indexed keywords

ANNEALING; ENERGY GAP; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; NANOCRYSTALS; OXYGEN; PHOTOLUMINESCENCE; SILICA;

ABSORPTION CROSS SECTIONS; ANNEALING ATMOSPHERES; ANNEALING TEMPERATURES; DEFECT-RELATED EMISSION; NEAR BAND EDGE EMISSIONS; TRANSMISSION ELECTRON MICROSCOPY IMAGES; UV EMISSIONS; ZNO NANOCRYSTAL;

ZINC OXIDE;

EID: 84891418820     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-517     Document Type: Article

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