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Journal of Alloys and Compounds

Volumn 509, Issue 6, 2011, Pages 3132-3135

Formation mechanisms of ZnO nanocrystals embedded in an amorphous Zn 2xSi1-xO2 layer due to sputtering and annealing

(5) Shin, J W a,d Lee, J Y a No, Y S b Kim, T W b Choi, W K c

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Hanyang University (South Korea)

c Korea Institute of Science and Technology (South Korea)

d Korea Basic Science Institute (KBSI) (South Korea)

Author keywords

Atomic scale structure; Oxide materials; Semiconductors; Surfaces and interfaces; TEM; Thin films; Transmission electron microscopy

Indexed keywords

ATOMIC SCALE STRUCTURES; OXIDE MATERIALS; SEMICONDUCTORS; SURFACES AND INTERFACES; TEM; TRANSMISSION ELECTRON;

ANNEALING; ATOMS; ELECTRON MICROSCOPY; HETEROJUNCTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOCRYSTALS; OXIDE FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE CHEMISTRY; SURFACES; THIN FILMS; ZINC; ZINC OXIDE;

CRYSTAL ATOMIC STRUCTURE;

EID: 78651376693 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.12.021 Document Type: Article

Times cited : (2)

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