Intense photoluminescence of slightly doped ZnO-SiO2 matrix

Chemical Physics Letters

Volumn 425, Issue 1-3, 2006, Pages 77-81

  Bouguerra, M ^a   Samah, M ^a   Belkhir, M A ^a   Chergui, A ^d   Gerbous, L ^b   Nouet, G ^c   Chateigner, D ^c   Madelon, R ^c  

^a UNIVERSITY OF BEJAIA   (Algeria)

^b CENTRE DE RECHERCHE NUCLÉAIRE D ALGER   (Algeria)

^c UNIVERSITÉ DE CAEN   (France)

^d FERHAT ABBAS UNIVERSITY   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; GELATION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SILICA; SOL-GELS; TRANSMISSION ELECTRON MICROSCOPY;

BLUE-VIOLET LUMINESCENCE; SLIGHTLY DOPED ZNO-SIO2 MATRIX; SOL-GEL METHOD; ZNO CRYSTALLITES;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 33746935125     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2006.03.103     Document Type: Article

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