Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se, Te) n-MOSFETs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2013, Pages 408-411

  Chang, Jiwon ^a   Register, Leonard F ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

atomistic; quantum transport; transiton metal dichalcogenides

Indexed keywords

ATOMISTIC; DICHALCOGENIDES; DRAIN-INDUCED BARRIER LOWERING; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NEGATIVE DIFFERENTIAL RESISTANCES; QUANTUM TRANSPORT; QUANTUM TRANSPORT SIMULATIONS; TRANSITION METAL DICHALCOGENIDES;

BALLISTICS; MONOLAYERS; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICES; TRANSITION METALS; TRANSPORT PROPERTIES;

MOSFET DEVICES;

EID: 84891076137     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2013.6650661     Document Type: Conference Paper

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