High-frequency design considerations of dual active bridge 1200 V SiC MOSFET DC-DC converter

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2011, Pages 314-320

  Kadavelugu, Arun ^a   Baek, Seunghun ^a   Dutta, Sumit ^a   Bhattacharya, Subhashish ^a   Das, Mrinal ^b   Agarwal, Anant ^b   Scofield, James ^c  

^a North Carolina State University   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CRITICAL FIELD STRENGTH; DESIGN CONSIDERATIONS; DUAL ACTIVE BRIDGES; HIGH FREQUENCY HF; HIGH FREQUENCY OPERATION; HIGH POWER DENSITY; HIGH POWER DENSITY CONVERTER; HIGH VOLTAGE DEVICES; HIGH-POWER; MOSFETS; SIC DEVICES; SIC MOSFET; SWITCHING WAVEFORMS;

DC POWER TRANSMISSION; DC-DC CONVERTERS; HIGH FREQUENCY TRANSFORMERS; MOSFET DEVICES; POWER ELECTRONICS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955786991     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2011.5744614     Document Type: Conference Paper

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