-
1
-
-
56549101371
-
Plasma wave terahertz electronics
-
Nov.
-
N. Pala and M. S. Shur, "Plasma wave terahertz electronics, " Electronics Letters., vol. 44, pp. 1391, Nov. 2008.
-
(2008)
Electronics Letters
, vol.44
, pp. 1391
-
-
Pala, N.1
Shur, M.S.2
-
2
-
-
76849091672
-
Enhanced plasma wave detection of terahertz radiation using multiple high electron mobility transistors connected in series
-
Feb.
-
T. A. Elkhatib, V. Y. Kachorovskii, W. J. Stillman, D. B. Veksler, K. N. Salama, X.-C. Zhang, "Enhanced plasma wave detection of terahertz radiation using multiple high electron mobility transistors connected in series." IEEE Trans. Micro. Theo. and Tech. vol. 58, pp. 331-337, Feb. 2010.
-
(2010)
IEEE Trans. Micro. Theo. and Tech
, vol.58
, pp. 331-337
-
-
Elkhatib, T.A.1
Kachorovskii, V.Y.2
Stillman, W.J.3
Veksler, D.B.4
Salama, K.N.5
Zhang, X.-C.6
-
3
-
-
79951556116
-
-
Jan./ Feb.
-
G. C. Dyer, G. R. Aizin, J. L. Reno, E. A. Shaner, and S. J. Allen, IEEE Journal of Selected Topics In Quantum Electronics, vol. 17, pp. 85-91, Jan./ Feb. 2011.
-
(2011)
IEEE Journal of Selected Topics in Quantum Electronics
, vol.17
, pp. 85-91
-
-
Dyer, G.C.1
Aizin, G.R.2
Reno, J.L.3
Shaner, E.A.4
Allen, S.J.5
-
4
-
-
84863716813
-
A self-mixing NMOS channeldetector optimized for mm-wave and THz signals
-
A. PleterŜek, and J. Trontelj, "A self-mixing NMOS channeldetector optimized for mm-wave and THz signals," J. Infrared Milli. Terahz Waves, vol. 33, pp. 615-626, 2012.
-
(2012)
J. Infrared Milli. Terahz Waves
, vol.33
, pp. 615-626
-
-
PleterŜek, A.1
Trontelj, J.2
-
5
-
-
33749671285
-
-
Sep.
-
E. A. Shaner, A. D. Grine, M. C. Wanke, M. Lee, J. L. Reno, and S. J. Allen, IEEE Photo. Tech. Lett. vol. 18, pp. 1925-1927, Sep. 2006.
-
(2006)
IEEE Photo. Tech. Lett
, vol.18
, pp. 1925-1927
-
-
Shaner, E.A.1
Grine, A.D.2
Wanke, M.C.3
Lee, M.4
Reno, J.L.5
Allen, S.J.6
-
8
-
-
24944576689
-
Current instability and plasma waves generation in ungated two-dimensional electron layers
-
M. Dyakonov and M. S. Shur, "Current instability and plasma waves generation in ungated two-dimensional electron layers," Applied Physics Letters, vol. 87, pp. 111501-1-111501-3 (2005).
-
(2005)
Applied Physics Letters
, vol.87
, pp. 1115011-1115013
-
-
Dyakonov, M.1
Shur, M.S.2
-
9
-
-
33749241663
-
Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors
-
A. EI Fatimy, F. Teppe, N. Dyakonova, W. Knap et al. " Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors" Applied Physics Letters, vol. 89, pp. 131926-1-131926-3 (2006).
-
(2006)
Applied Physics Letters
, vol.89
, pp. 1319261-1319263
-
-
Fatimy, A.E.I.1
Teppe, F.2
Dyakonova, N.3
Knap, W.4
-
10
-
-
33751559415
-
Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors
-
Nov.
-
F. Teppe, M. Orlov, A. EI Fatimy, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, "Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors." Appl. Phys. Lett., vol. 89, pp. 222109, Nov. 2006.
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 222109
-
-
Teppe, F.1
Orlov, M.2
Fatimy, A.E.I.3
Knap, W.4
Torres, J.5
Gavrilenko, V.6
Shchepetov, A.7
Roelens, Y.8
Bollaert, S.9
-
11
-
-
84869157391
-
Spectrum analysis of 2D plasmon in GaN-based high electron mobility transistors
-
L. Wang, X. S. Chen, W. D. Hu, W. Lu, "Spectrum analysis of 2D plasmon in GaN-based high electron mobility transistors", IEEE Journal of Selected Topics In Quantum Electronics, vol.19, 8400507 (2013).
-
(2013)
IEEE Journal of Selected Topics in Quantum Electronics
, vol.19
, pp. 8400507
-
-
Wang, L.1
Chen, X.S.2
Hu, W.D.3
Lu, W.4
-
12
-
-
84868562125
-
Analysis of interface scattering in AlGaN/GaN/InGaN/GaN double-heterojunction high-electron-mobility transistors
-
May.
-
L. Wang, W. D. Hu, X. S. Chen, and W. Lu, "Analysis of interface scattering in AlGaN/GaN/InGaN/GaN double-heterojunction high-electron-mobility transistors," Journal of Electronic materials, Vol. 41, pp. 2130, May. 2012.
-
(2012)
Journal of Electronic Materials
, vol.41
, pp. 2130
-
-
Wang, L.1
Hu, W.D.2
Chen, X.S.3
Lu, W.4
-
13
-
-
77956805865
-
The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors
-
Sep.
-
L. Wang, W. D. Hu, X. S. Chen, and W. Lu, "The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors, " J. Appl. Phys., Vol. 108, pp. 054501, Sep. 2010.
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 054501
-
-
Wang, L.1
Hu, W.D.2
Chen, X.S.3
Lu, W.4
-
14
-
-
84860389364
-
The plasmonic resonant absorption in GaN doublechannel high electron mobility transistors
-
Aug.
-
L. Wang, X. S. Chen, W. D. Hu, J. Wang, J. Wang, X. D. Wang and W. Lu, "The plasmonic resonant absorption in GaN doublechannel high electron mobility transistors," Appl. Phys. Lett., Vol. 99, pp. 063502, Aug. 2011.
-
(2011)
Appl. Phys. Lett.
, vol.99
, pp. 063502
-
-
Wang, L.1
Chen, X.S.2
Hu, W.D.3
Wang, J.4
Wang, J.5
Wang, X.D.6
Lu, W.7
-
15
-
-
77950791946
-
-
Eduardo V. Castro, K. S. Novoselov, S. V. Morozov, N. M. R. Peres, J. M. B. Lopes dos Santos, Johan Nilsson, F. Guinea, A. K. Geim and A. H. Castro Neto, J. Phys.: Condens. Matter 22, (2010) 175503.
-
(2010)
J. Phys.: Condens. Matter
, vol.22
, pp. 175503
-
-
Castro, E.V.1
Novoselov, K.S.2
Morozov, S.V.3
Peres, N.M.R.4
Lopes, J.M.B.5
Dos Santos6
Nilsson, J.7
Guinea, F.8
Geim, A.K.9
Castro Neto, A.H.10
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