메뉴 건너뛰기




Volumn , Issue , 2013, Pages 101-102

Terahertz plasmon resonances in GaN and graphene

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE DEVICES; MULTIPLE QUANTUM SYSTEMS; PLASMON RESONANCES; RESONANT ABSORPTION; TERAHERTZ; THZ RADIATION; TUNABILITIES; WIDE SPECTRUM;

EID: 84890515065     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NUSOD.2013.6633144     Document Type: Conference Paper
Times cited : (2)

References (15)
  • 1
    • 56549101371 scopus 로고    scopus 로고
    • Plasma wave terahertz electronics
    • Nov.
    • N. Pala and M. S. Shur, "Plasma wave terahertz electronics, " Electronics Letters., vol. 44, pp. 1391, Nov. 2008.
    • (2008) Electronics Letters , vol.44 , pp. 1391
    • Pala, N.1    Shur, M.S.2
  • 2
    • 76849091672 scopus 로고    scopus 로고
    • Enhanced plasma wave detection of terahertz radiation using multiple high electron mobility transistors connected in series
    • Feb.
    • T. A. Elkhatib, V. Y. Kachorovskii, W. J. Stillman, D. B. Veksler, K. N. Salama, X.-C. Zhang, "Enhanced plasma wave detection of terahertz radiation using multiple high electron mobility transistors connected in series." IEEE Trans. Micro. Theo. and Tech. vol. 58, pp. 331-337, Feb. 2010.
    • (2010) IEEE Trans. Micro. Theo. and Tech , vol.58 , pp. 331-337
    • Elkhatib, T.A.1    Kachorovskii, V.Y.2    Stillman, W.J.3    Veksler, D.B.4    Salama, K.N.5    Zhang, X.-C.6
  • 4
    • 84863716813 scopus 로고    scopus 로고
    • A self-mixing NMOS channeldetector optimized for mm-wave and THz signals
    • A. PleterŜek, and J. Trontelj, "A self-mixing NMOS channeldetector optimized for mm-wave and THz signals," J. Infrared Milli. Terahz Waves, vol. 33, pp. 615-626, 2012.
    • (2012) J. Infrared Milli. Terahz Waves , vol.33 , pp. 615-626
    • PleterŜek, A.1    Trontelj, J.2
  • 8
    • 24944576689 scopus 로고    scopus 로고
    • Current instability and plasma waves generation in ungated two-dimensional electron layers
    • M. Dyakonov and M. S. Shur, "Current instability and plasma waves generation in ungated two-dimensional electron layers," Applied Physics Letters, vol. 87, pp. 111501-1-111501-3 (2005).
    • (2005) Applied Physics Letters , vol.87 , pp. 1115011-1115013
    • Dyakonov, M.1    Shur, M.S.2
  • 9
    • 33749241663 scopus 로고    scopus 로고
    • Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors
    • A. EI Fatimy, F. Teppe, N. Dyakonova, W. Knap et al. " Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors" Applied Physics Letters, vol. 89, pp. 131926-1-131926-3 (2006).
    • (2006) Applied Physics Letters , vol.89 , pp. 1319261-1319263
    • Fatimy, A.E.I.1    Teppe, F.2    Dyakonova, N.3    Knap, W.4
  • 12
    • 84868562125 scopus 로고    scopus 로고
    • Analysis of interface scattering in AlGaN/GaN/InGaN/GaN double-heterojunction high-electron-mobility transistors
    • May.
    • L. Wang, W. D. Hu, X. S. Chen, and W. Lu, "Analysis of interface scattering in AlGaN/GaN/InGaN/GaN double-heterojunction high-electron-mobility transistors," Journal of Electronic materials, Vol. 41, pp. 2130, May. 2012.
    • (2012) Journal of Electronic Materials , vol.41 , pp. 2130
    • Wang, L.1    Hu, W.D.2    Chen, X.S.3    Lu, W.4
  • 13
    • 77956805865 scopus 로고    scopus 로고
    • The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors
    • Sep.
    • L. Wang, W. D. Hu, X. S. Chen, and W. Lu, "The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors, " J. Appl. Phys., Vol. 108, pp. 054501, Sep. 2010.
    • (2010) J. Appl. Phys. , vol.108 , pp. 054501
    • Wang, L.1    Hu, W.D.2    Chen, X.S.3    Lu, W.4
  • 14
    • 84860389364 scopus 로고    scopus 로고
    • The plasmonic resonant absorption in GaN doublechannel high electron mobility transistors
    • Aug.
    • L. Wang, X. S. Chen, W. D. Hu, J. Wang, J. Wang, X. D. Wang and W. Lu, "The plasmonic resonant absorption in GaN doublechannel high electron mobility transistors," Appl. Phys. Lett., Vol. 99, pp. 063502, Aug. 2011.
    • (2011) Appl. Phys. Lett. , vol.99 , pp. 063502
    • Wang, L.1    Chen, X.S.2    Hu, W.D.3    Wang, J.4    Wang, J.5    Wang, X.D.6    Lu, W.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.