Ferroelectric properties of vertically aligned nanostructured BaTiO 3-CeO2 thin films and their integration on silicon

ACS Applied Materials and Interfaces

Volumn 5, Issue 23, 2013, Pages 12541-12547

  Khatkhatay, Fauzia ^a   Chen, Aiping ^a   Lee, Joon Hwan ^b   Zhang, Wenrui ^b   Abdel Raziq, Haron ^a   Wang, Haiyan ^a,b  

^a Department of Electrical and Computer Engineering   (United States)

^b TEXAS A AND M UNIVERSITY   (United States)

Author keywords

barium titanate; cerium oxide; ferroelectric; silicon integration; vertically aligned nanocomposites (VAN)

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CERIUM OXIDES; FERROELECTRIC PROPERTY; FERROELECTRIC RESPONSE; POLARIZATION MEASUREMENTS; SILICON INTEGRATION; VERTICALLY ALIGNED; VERTICALLY ALIGNED NANOCOMPOSITE STRUCTURES;

BARIUM COMPOUNDS; BARIUM TITANATE; EPITAXIAL FILMS; EPITAXIAL GROWTH; FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRICITY; NANOCOMPOSITE FILMS; NANOCOMPOSITES; STRONTIUM TITANATES; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON;

EID: 84890457388     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am403834k     Document Type: Article

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