High performance nonvolatile memory devices based on Cu2-xSe nanowires

Applied Physics Letters

Volumn 103, Issue 19, 2013, Pages

  Wu, Chun Yan ^a   Wu, Yi Liang ^a   Wang, Wen Jian ^a   Mao, Dun ^a   Yu, Yong Qiang ^a   Wang, Li ^a   Xu, Jun ^a   Hu, Ji Gang ^a   Luo, Lin Bao ^a  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BUILDING BLOCKES; CONDUCTANCE SWITCHING; CONDUCTING FILAMENT; ELECTRICAL ANALYSIS; NONVOLATILE MEMORY DEVICES; RATIONAL SYNTHESIS; RESISTIVE SWITCHING BEHAVIORS; SOLUTION METHODS;

NANOWIRES; SWITCHING; SWITCHING SYSTEMS;

NONVOLATILE STORAGE;

EID: 84889804619     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4828881     Document Type: Article

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