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Volumn 1536, Issue , 2013, Pages 187-192
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Study of surface passivation of CZ c-Si by PECVD a-Si:H films; a comparison between quasi-steady-state and transient photoconductance decay measurement
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Author keywords
[No Author keywords available]
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Indexed keywords
DEPOSITION PARAMETERS;
EFFECTIVE LIFETIME;
HYDROGENATED AMORPHOUS SILICON (A-SI:H);
MINORITY CARRIER LIFETIMES;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD);
RECOMBINATION RATE;
SURFACE PASSIVATION;
TRANSIENT PHOTOCONDUCTANCE DECAYS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON;
SILICON WAFERS;
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EID: 84889685157
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/opl.2013.614 Document Type: Conference Paper |
Times cited : (1)
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References (13)
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