메뉴 건너뛰기




Volumn 1536, Issue , 2013, Pages 187-192

Study of surface passivation of CZ c-Si by PECVD a-Si:H films; a comparison between quasi-steady-state and transient photoconductance decay measurement

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PARAMETERS; EFFECTIVE LIFETIME; HYDROGENATED AMORPHOUS SILICON (A-SI:H); MINORITY CARRIER LIFETIMES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); RECOMBINATION RATE; SURFACE PASSIVATION; TRANSIENT PHOTOCONDUCTANCE DECAYS;

EID: 84889685157     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2013.614     Document Type: Conference Paper
Times cited : (1)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.