Pseudomorphic growth and strain relaxation of α-Zn3P 2 on GaAs(001) by molecular beam epitaxy

Journal of Crystal Growth

Volumn 363, Issue , 2013, Pages 205-210

  Bosco, Jeffrey P ^a   Kimball, Gregory M ^a   Lewis, Nathan S ^a   Atwater, Harry A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A1. Pseudomorphic growth; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Phosphides; B3. Solar cells

Indexed keywords

CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOSPHORUS COMPOUNDS; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; X RAY DIFFRACTION;

B1. PHOSPHIDES; COMPOUND SOURCE; EPITAXIAL RELATIONSHIPS; HALL EFFECT MEASUREMENT; INTERSTITIALS; PSEUDOMORPHIC GROWTH; STRAINED FILMS; ZINC PHOSPHIDE;

ZINC;

EID: 84888376866     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.10.054     Document Type: Article

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