Molecular beam epitaxy of n-type ZnS: A wide band gap emitter for heterojunction PV devices

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 2513-2517

  Bosco, Jeffrey ^a   Tajdar, Faisal ^a   Atwater, Harry ^a  

^a California Institute of Technology   (United States)

Author keywords

Conductive films; epitaxial layers; photovoltaic cells; X ray diffraction; zinc compounds

Indexed keywords

EPITAXIAL RELATIONSHIPS; GAAS(001); HEAVILY DOPED; HIGH RESOLUTION X RAY DIFFRACTION; LOW-TEMPERATURE EPITAXY; SELECTED-AREA ELECTRON DIFFRACTION MEASUREMENTS; TRANSPARENT CONDUCTIVE OXIDES; WIDE BAND GAP; ZINC-BLENDE; ZNS FILMS;

CONDUCTIVE FILMS; DOPING (ADDITIVES); ELECTRON DIFFRACTION; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FILM GROWTH; GALLIUM ARSENIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM; SUBSTRATES; X RAY DIFFRACTION; ZINC COMPOUNDS; ZINC SULFIDE;

SILVER;

EID: 84869386905     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6318105     Document Type: Conference Paper

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