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Science China: Physics, Mechanics and Astronomy
Volumn 56, Issue 11, 2013, Pages 2065-2070
Penetration depth at various Raman excitation wavelengths and stress model for Raman spectrum in biaxially-strained Si
Author keywords

model; Raman; strained Si; stress
Indexed keywords

MATERIAL STRESS; QUANTITATIVE RESULT; RAMAN; RAMAN EXCITATION; SECULAR EQUATIONS; STRAINED-SI; STRESS MAGNITUDE; STRESS MODELING;
EID: 84888133362     PISSN: 16747348     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11433-013-5205-3     Document Type: Article
Times cited : (29)
References (12)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.