Valence band structure of strained Si/(111)Si1-xGex

Science China: Physics, Mechanics and Astronomy

Volumn 53, Issue 3, 2010, Pages 454-457

  Song, Jian Jun ^a   Zhang, He Ming ^a   Hu, Hui Yong ^a   Dai, Xian Ying ^a   Xuan, Rong Xi ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Hole effective mass; KP method; Strained Si; Valence band

Indexed keywords

[110] DIRECTION; CONDUCTION CHANNEL; GE FRACTION; HIGH PERFORMANCE DEVICES; HIGH-SPEED; HOLE EFFECTIVE MASS; K-P METHOD; SI-BASED; STRAINED-SI; VALENCE BAND EDGES;

GERMANIUM; VALENCE BANDS;

SILICON;

EID: 77953143070     PISSN: 16747348     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11433-010-0093-2     Document Type: Article

References (9)

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