Influence of chemisorbed oxygen on the growth of graphene on Cu(100) by chemical vapor deposition

Journal of Physical Chemistry C

Volumn 117, Issue 45, 2013, Pages 23919-23927

  Robinson, Zachary R ^a,b   Ong, Eng Wen ^a   Mowll, Tyler R ^a   Tyagi, Parul ^a   Gaskill, D Kurt ^b   Geisler, Heike ^c   Ventrice, Carl A ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYTIC DECOMPOSITION; CHEMISORBED OXYGEN; COPPER SUBSTRATES; CRYSTAL QUALITIES; EPITAXIAL GRAPHENE; GROWTH MORPHOLOGY; RELATIVE ORIENTATION; ROTATIONAL DISORDER;

CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; COPPER; EPITAXIAL FILMS; ETHYLENE; GROWTH TEMPERATURE; LOW ENERGY ELECTRON DIFFRACTION; NUCLEATION; OXYGEN; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SUPERCONDUCTING FILMS; VAPORS;

GRAPHENE;

EID: 84887885511     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp410142r     Document Type: Article

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