Hydrogen gas sensing properties of Pd/ZnO thin films grown on n-Si<100> substrates at room-temperature by thermal evaporation and sol-gel techniques: A comparative study

Indian Journal of Pure and Applied Physics

Volumn 51, Issue 11, 2013, Pages 792-799

  Yadav, Aniruddh Bahadur ^a   Periasamy, C ^b   Bhaumik, Sudipta ^c   Jit, S ^a  

^a BANARAS HINDU UNIVERSITY   (India)

^b MALAVIYA NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^c INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

H2 gas sensor; Nanocrystalline ZnO thin films; Palladium catalyst; Schottky contacts; Sol gel; Thermal evaporation

Indexed keywords

EID: 84887851031     PISSN: 00195596     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (29)

1. Hardan N H Al, Abdullah M J & Aziz A Abdul, Int J Hydrogen Energy, 35 (2010) 4428.
2. Han C, Han S & Khtkar S P, Sensors, 6 (2006) 492.
3. Brett G L Boon, Bousek J, Black G, Moretto P, Castello P & Hubert T, Int J Hydrogen Energy, (2010) 35373.
4. Basu S & Dutta A, Sens. Actuator.B, 22 (1994) 83.
5. Basu S & Dutta A, Mater Chem Phys, 47 (1997) 93.
6. Katsuki A & Fukui K, Sens Actuators B Chem, 52 (1998) 30.
7. Anderson Travis, Ren Fan, Pearton Stephen, Kang Byoung San, Wang Hung -Ta, Chang Chih Yang & Lin Jenshon, Sensors, 9 (2009) 4669.
8. Kanungo J, Saha H & Basu S, Sensors Actuators B Chem, 147 (2010) 128.
9. Hung Nguyen Le, Ahn Eunseong, Park Seongyong, Jung Hooncheol, Kim Hyojin, Hong Soon-Ku, & Kim Dojin, J Vac Sci Technol, 27 (2009) 1347.
10. Erol A, Okur S, Comba B, Mermer O & Arikan M C, Sensors Actuators B Chem,145 (2010) 180.
11. Özgür Ü, Alivov Ya I, Liu C, Teke A, Reshchikov M A, Doan S, Avrutin V, Cho S J, & Morkoç H, J Appl Phys,98 (2005) 041301.
12. Tan S T, Chen B J, Sun X W, Fan W J & Kwok H S, J Appl Phys, 98 (2005) 013505.
13. Jin B J, Imb S & Lee S Y, Thin Solid Films, 366 (2000) 110.
14. Yadav Aniruddh Bahadur, Periasamy C & Jit S Advanced Science Engineering & Medicine, 5 (2013) 112.
15. Kim Kyoung Kook, Kim Hyun Sik, Hwang Dae-Kue, Lim Jae-Hong, & Park Seong Ju, Appl Phys Lett, 83 (2003) 63.
16. Ghodsi F E & Absalan H, Acta Physica Polonica, 118 (2010) 659.
17. Pandis Ch, Brilis N, Bourithis E, Tsamakis D, Ali H, Krishnamoorthy Soumya, Iliadis Agis A & Kompitsas M, IEEE SENS J, 7 (2007) 448.
18. Yu J, Ippolito S J, Wlodarski W, Stramo M & Kalantorzadeh K, Nanotechnology, 21 (2010) 265502.
19. Shafieia M, Yua J, Arsata R, Kalantar-zadeha K, Cominib E, Ferronib M, Sberveglierib G & Wlodarskia W, Sensors Actuators B Chem, 146 (2010)507.
20. H Kim Y, J Kim H, Kim Y H, Chae K H, Whang C N, Song J H & Im S, Optical Mater, 17 (2001) 141.
21. P Mitra, Chatterjee A & Maiti H, Mater Lett, 35 (1998) 33.
22. Chakrabarti Runa & Periasamy C, Sci Adv Mater, 3 (2011) 276.
23. Banerjee A N, Ghosh C K, Chattopadhyay K K, Minoura Hideki, Sarkar Ajay K, Akiba Atsuya, Kamiya Atsushi & Endo Tamio, Thin Solid Films, 496 (2006) 112.
24. Abrarov S M, Yuldashev Sh U, Kim T W, Lee S B, Kwon Y H & Kang T W,Optics Commun, 250 (2005) 111.
25. Periasamy C & Chakrabarti P, J Electron Mater, 40 (2011) 259.
26. Pau J L, Piqueras J, Rogers D J, Teherani F H, Minder K, McClintock R & Razeghi M, J Appl Phys, 107 (2010) 033719.
27. Mtangi W, Auret F D, Nyamhere C, Rensburg P J Jansevan, Diale M & Chawanda A, Physica B, 404 (2009) 1092.
28. Weichsel C, Pagni O & Leitch A W R, Semicond Sci Technol, 20 (2005) 840.
29. Sze S M, Phys of Semiconductors Devices. Wiley, New York (1981) 246.