Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters

Volumn 83, Issue 3, 2003, Pages 485-487

  Jessen, G H ^a   Fitch, R C ^a   Gillespie, J K ^a   Via, G D ^a   White, B D ^b   Bradley, S T ^b   Walker Jr , D E ^b   Brillson, L J ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DEFECTS; FREQUENCY RESPONSE; GALLIUM NITRIDE; OHMIC CONTACTS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

CONTACT RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0042126791     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1593829     Document Type: Article

References (10)

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