Design of X-band GaN MMICs using field plates

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Volumn , Issue , 2009, Pages 33-36

  Kuhn J ^a   Van Raay, F ^a   Quay, R ^a   Kiefer, R ^a   Peschel, D ^a   Mikulla, M ^a   Seelmann Eggebert, M ^a   Bronner, W ^a   Schlechtweg, M ^a   Ambacher, O ^a   Thumm, M ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BROADBAND APPLICATIONS; DUAL STAGE; FIELD PLATES; GAN HEMTS; HIGH-POWER; MAXIMUM OUTPUT POWER; MICROSTRIPES; NARROW BANDS; OUTPUT POWER; X-BAND FREQUENCIES;

BROADBAND AMPLIFIERS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 72449207955     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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6. F. van Raay et al., "X-Band High-Power Microstrip AlGaN/GaN HEMT Amplifier MMICs", IEEE MTT-S International Microwave Symposium Digest, pp. 1368-1371, June 2006.
7. J. Kühn et al., "Design of Highly Efficient GaN X-Band Power Amplifier MMICs ", IEEE MTT-S International Microwave Symposium Digest, accepted, June 2009.