SCOPUS 정보 검색 플랫폼

Volumn 146, Issue , 2014, Pages 470-474

Effect of pressure and Al doping on structural and optical properties of ZnO nanowires synthesized by chemical vapor deposition

(6) Mohanta, Antaryami a Simmons Jr , Jay G b Everitt, Henry O a Shen, Gang c Margaret Kim, Seongsin c Kung, Patrick c

a US Army AMRDEC Development (United States)

b DUKE UNIVERSITY (United States)

c University of Alabama (United States)

Author keywords

Chemical vapor deposition; Energy transfer process; n Type doping; Oxygen vacancies; Photoluminescence; ZnO nanowires

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; ENERGY TRANSFER; GROWTH RATE; II-VI SEMICONDUCTORS; NANOWIRES; OPTICAL PROPERTIES; OXIDE MINERALS; PHOTOLUMINESCENCE; PRESSURE EFFECTS; ZINC OXIDE;

AL-DOPED ZNO NANOWIRES; EFFECT OF PRESSURE; EMISSION MECHANISM; ENERGY TRANSFER PROCESS; N-TYPE DOPING; OXYGEN AMBIENT PRESSURE; STRUCTURAL AND OPTICAL PROPERTIES; ZNO NANOWIRES;

OXYGEN VACANCIES;

EID: 84887253663 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2013.10.028 Document Type: Article

Times cited : (36)

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