Photoluminescence lifetime of Al-doped ZnO films in visible region

Solid State Communications

Volumn 150, Issue 47-48, 2010, Pages 2341-2345

  Sharma, Bhupendra K ^a   Khare, Neeraj ^a   Haranath, D ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

A. Al doped ZnO films; B. Chemical synthesis; C. Defect; D. Optical properties

Indexed keywords

AL-DOPED ZNO; AL-DOPING; B. CHEMICAL SYNTHESIS; BIEXPONENTIAL; C. DEFECT; CHEMICAL VAPOR; D. OPTICAL PROPERTIES; DECAY COMPONENTS; DECAY PROCESS; DEEP LEVEL; GRAIN SIZE; NON-RADIATIVE RECOMBINATIONS; PHOTOLUMINESCENCE LIFETIME; PHOTOLUMINESCENCE SPECTRUM; PL INTENSITY; QUARTZ SUBSTRATE; RADIATIVE RECOMBINATION; RELATIVE CONTRIBUTION; TIME-RESOLVED PHOTOLUMINESCENCE; VISIBLE BAND; VISIBLE REGION; ZNO; ZNO FILMS;

CHEMICAL VAPOR DEPOSITION; DEFECTS; DOPING (ADDITIVES); METALLIC FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUARTZ; SYNTHESIS (CHEMICAL); ZINC OXIDE;

ALUMINUM;

EID: 78249287533     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.10.002     Document Type: Article

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