Controlled growth of vertically aligned ZnO nanowires with different crystal orientation of the ZnO seed layer

Nanotechnology

Volumn 19, Issue 23, 2008, Pages

  Cha, S N ^a   Song, B G ^b   Jang, J E ^a   Jung, J E ^a   Han, I T ^a   Ha, J H ^b   Hong, J P ^b   Kang, D J ^c   Kim, J M ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Hanyang University   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC WIRE; NANOSTRUCTURES; NANOWIRES; OXIDES; SILICA; SILICON; SILICON COMPOUNDS; ZINC; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

(1 1 1) ORIENTATION; CONTROLLED GROWTH; GROWTH METHOD; SILICON DIOXIDES; SYNTHESIS (OF CHIRAL IONIC LIQUIDS); VERTICALLY ALIGNED; ZNO NANOWIRES; ZNO SEED;

SEMICONDUCTING ZINC COMPOUNDS;

NANOWIRE; SILICON; SILICON DIOXIDE; ZINC; ZINC OXIDE;

ARTICLE; CATALYST; CRYSTAL; CRYSTAL STRUCTURE; DIRECT CURRENT; OXIDATION; PHOTON; PRIORITY JOURNAL; SOLID; SYNTHESIS; VAPOR;

EID: 44949092493     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/23/235601     Document Type: Article

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