Fabrication of a Schottky junction diode with direct growth graphene on silicon by a solid phase reaction

Journal of Physics D: Applied Physics

Volumn 46, Issue 45, 2013, Pages

  Kalita, Golap ^a   Hirano, Ryo ^a   Ayhan, Muhammed E ^a   Tanemura, Masaki ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-C THIN FILMS; CARBON DIFFUSION; CATALYST LAYERS; METALLIC BEHAVIOUR; POTENTIAL BARRIERS; RECTIFICATION DIODES; SCHOTTKY JUNCTIONS; SOLID PHASE REACTION;

COBALT COMPOUNDS; INTERFACES (MATERIALS); SILICON; SILICON OXIDES; SUBSTRATES; SYNTHESIS (CHEMICAL);

GRAPHENE;

EID: 84887118024     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/45/455103     Document Type: Article

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