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Volumn 25, Issue 44, 2013, Pages

Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface

Author keywords

[No Author keywords available]

Indexed keywords

ATTENUATION LENGTHS; BALLISTIC ELECTRON EMISSION MICROSCOPY; ENERGY DISTRIBUTIONS; EPITAXIAL NISI; HOT HOLES; HOT-ELECTRON TRANSPORT; LOWER ENERGIES; SCHOTTKY;

EID: 84886911417     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/25/44/445005     Document Type: Article
Times cited : (4)

References (27)
  • 4
    • 0000774645 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.61.9427 B
    • Knorren R et al 2000 Phys. Rev. B 61 9427
    • (2000) Phys. Rev. , vol.61 , pp. 9427
    • Knorren, R.1
  • 23
    • 0026868367 scopus 로고
    • Morphology of hydrogen-terminated Si(111) and Si(100) surfaces upon etching in HF and buffered-HF solutions
    • DOI 10.1016/0039-6028(92)91363-G
    • Dumas P, Chabal Y J and Jakob P 1992 Surf. Sci. 269/270 867 (Pubitemid 23561513)
    • (1992) Surface Science , vol.269 PT 70 , Issue.1-3 PART B , pp. 867-878
    • Dumas, P.1    Chabal, Y.J.2    Jakob, P.3
  • 26
    • 0001237346 scopus 로고
    • 10.1103/PhysRevLett.52.461 0031-9007
    • Tung R T 1984 Phys. Rev. Lett. 52 461
    • (1984) Phys. Rev. Lett. , vol.52 , pp. 461
    • Tung, R.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.