Hot electron transmission in metals using epitaxial NiSi 2/n-Si(111) interfaces

Applied Physics Letters

Volumn 99, Issue 3, 2011, Pages

  Parui, S ^a   Wit, B ^a   Bignardi, L ^a   Rudolf, P ^a   Kooi, B ^a   Van Wees, B J ^a   Banerjee, T ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC ELECTRON EMISSION MICROSCOPY; BARRIER HEIGHTS; ELECTRICAL TRANSPORT MEASUREMENTS; ELECTRON TRANSMISSION; NI FILMS; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SI (1 1 1); SI(111) SUBSTRATE;

CRYSTAL ORIENTATION; DISTILLATION; ELECTRONS; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; HOT ELECTRONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 79960748033     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3610458     Document Type: Article

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