10 cm diameter mono cast Si growth and its characterization

Solid State Phenomena

Volumn 205-206, Issue , 2014, Pages 89-93

  Miyamura, Y ^a   Harada, H ^a   Jiptner, K ^a   Chen, J ^a   Prakash, R R ^a,b   Li, J Y ^a,c   Sekiguchi, T ^a,b   Kojima, T ^d   Ohshita, Y ^d   Ogura, A ^c   Fukuzawa, M ^e   Nakano, S ^f   Gao, B ^f   Kakimoto, K ^f  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c MEIJI UNIVERSITY   (Japan)

^d TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^e KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^f KYUSHU UNIVERSITY   (Japan)

Author keywords

Crystallization; Dislocations; Mono silicon; Precipitation; Seed cast growth

Indexed keywords

CRYSTALLIZATION; DEFECTS; DISLOCATIONS (CRYSTALS); INGOTS; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; TOPOGRAPHY;

EXTENDED DEFECT; GROWTH CONDITIONS; INFRARED MICROSCOPY; OPTIMIZED CONDITIONS; RESIDUAL STRAINS; SOLAR CELL EFFICIENCIES; UNIDIRECTIONAL SOLIDIFICATION; X-RAY TOPOGRAPHY;

FOURIER TRANSFORM INFRARED SPECTROSCOPY;

EID: 84886792777     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.205-206.89     Document Type: Conference Paper

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