Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2013, Pages 1396-1401

  Blum, Adrienne L ^a   Swirhun, James S ^a   Sinton, Ronald A ^a   Yan, Fei ^b   Herasimenka, Stanislau ^c   Roth, Thomas ^d   Lauer, Kevin ^e   Haunschild, Jonas ^f   Lim, Bianca ^g   Bothe, Karsten ^g   Hameiri, Ziv ^h   Seipel, Bjoern ⁱ   Xiong, Rentian ^j   Dhamrin, Marwan ^k   Murphy, John D ^l,m  

^a Sinton Consulting Inc   (United States)

^b APPLIED MATERIALS INC   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d Bosch Solar Energy AG   (Germany)

^e SolarTestLab Laboratory   (Germany)

^f FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^g INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^h NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

ⁱ SolarWorld Industries America   (United States)

^j Suniva   (United States)

^k TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^l UNIVERSITY OF OXFORD   (United Kingdom)

^m UNIVERSITY OF WARWICK   (United Kingdom)

more..

Author keywords

Charge carrier lifetime; Eddy currents; Photoconductivity; Silicon

Indexed keywords

CHARGE CARRIERS; EDDY CURRENTS; LABORATORIES; PHOTOCONDUCTIVITY; SILICON; SILICON WAFERS; TESTING;

BULK SAMPLES; CARRIER LIFETIME MEASUREMENTS; CARRIER RECOMBINATION; LIFETIME TESTS; QUASI-STEADY STATE; RECOMBINATION LIFETIME; REPRODUCIBILITIES; TRANSIENT MODES;

EDDY CURRENT TESTING;

EID: 84896473254     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2013.6744405     Document Type: Conference Paper

References (9)

1. R. A. Sinton and A. Cuevas, "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data," Applied Physics Letters, vol. 69, no. 17, pp. 2510-2512, 1996
2. G. L. Miller, D. A. H. Robinson and J. D. Wiley, "Contactless measurement of semiconductor conductivity by radio frequency-free-carrier power absorption," Rev. Sci. Instrum, vol. 47, no. 7, pp. 799-805, 1976
3. S. Bowden and R. A. Sinton, "Determining lifetime in silicon blocks and wafers with accurate expressions for carrier density," Journal of Applied Physics, vol. 102, no. 12, pp. 124501-124501-7, Dec 2007
4. SEMI PV13-0211 Test Method for Contactless Excess-Charge-Carrier Recombination Lifetime Measurement in Silicon Wafers, Ingots, and Bricks Using an Eddy-Current Sensor, 2011
5. J. S. Swirhun, R. A. Sinton, M. K. Forsyth and T. Mankad, "Contactless measurement of minority carrier lifetime in silicon ingots and bricks," Progress in Photovoltaics: Research and Applications, vol. 19, no. 3, pp. 313-319, 2011
6. ASTM E691-11 Standard Practice for Conducting an Interlaboratory Study to Determine the Precision of a Test Method, vol. 14. 02, 2011
7. R. K. McIntosh and R. A. Sinton, "Uncertainty in Photoconductance Lifetime Measurements that Use an Inductive-Coil Detector," in 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, 2008
8. K. Lauer, S. Walter, A. Sidelnicov, M. Herms, S. Diez, Y. Ludwig, M. Turek, S. Reissenweber and A. Lawerenz, "Round-robin of excess charge carrier lifetime and decay time measurements on silicon blocks and adjacent surface passivated wafers," in 26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, 2011
9. H. Nagel, B. Christopher and A. G. Aberle, "Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors," Journal of Applied Physics, vol. 86, no. 11, pp. 6218-6221, Dec 1999.