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Volumn 2002-January, Issue , 2002, Pages 261-264

Impact of power-supply noise on timing in high-frequency microprocessors

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; MICROPROCESSOR CHIPS;

EID: 84886699132     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPEP.2002.1057928     Document Type: Conference Paper
Times cited : (10)

References (11)
  • 1
    • 0038529280 scopus 로고    scopus 로고
    • Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits
    • March
    • "Physical and Predictive Models of Ultrathin Oxide Reliability in CMOS Devices and Circuits", James H. STATHIS, IEEE Transactions on Device and Materials Reliability, March 2001.
    • (2001) IEEE Transactions on Device and Materials Reliability
    • Stathis, J.H.1
  • 2
    • 0029732197 scopus 로고    scopus 로고
    • A new analytical model of SRAM cell stability in low-voltage operation
    • January
    • "A New Analytical Model of SRAM Cell Stability in Low-Voltage Operation", Tsutomo ICHIKAWA and Masayoshi SASAKI, IEEE Transactions on Electron Devices, January 1996.
    • (1996) IEEE Transactions on Electron Devices
    • Ichikawa, T.1    Sasaki, M.2
  • 5
    • 0031642709 scopus 로고    scopus 로고
    • Design and analysis of power distribution networks in powerpcm microprocessors
    • "Design and Analysis of Power Distribution Networks in PowerPCm Microprocessors", Abhijit DHARCHOUDHURY et al., Design Automation Conference, 1998.
    • (1998) Design Automation Conference
    • Dharchoudhury, A.1
  • 6
    • 0032657615 scopus 로고    scopus 로고
    • Analysis of performance impact caused by power supply noise in deep submicron devices
    • "Analysis of Performance Impact Caused by Power Supply Noise in Deep Submicron Devices", Yi-Min JIANG, and Kwang-Ting CHENG, Design Automation Conference, 1999.
    • (1999) Design Automation Conference
    • Jiang, Y.-M.1    Cheng, K.-T.2
  • 7
  • 9
    • 84948832118 scopus 로고    scopus 로고
    • An enhanced 130 nm generation logic technology featuring 60 nrn transistors optimized for high performance and low power at 0.7-1.4v
    • "An Enhanced 130 nm Generation Logic Technology Featuring 60 nrn Transistors Optimized for High Performance and Low Power at 0.7-1.4V", S. THOMPSON et al., IEEE International Electron Devices Meeting, 2001.
    • (2001) IEEE International Electron Devices Meeting
    • Thompson, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.